@InProceedings{SilvaLaRo:2017:PbSuSt,
               author = "Silva, Erasmo Assump{\c{c}}{\~a}o de Andrada e and La Rocca, 
                         Giuseppe C.",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)}",
                title = "PbSnTe surface states in the envelope-function approximation",
                 year = "2017",
         organization = "Brazilian Workshop on Semiconductor Physics, 18. (BWSP)",
             abstract = "We investigate theoretically the surface states of the topological 
                         insulator (TI) Pb1-xSnxTe compound within the envelope-function 
                         approximation. Heterostructures with inverted and large-gap 
                         materials are used to model the surfaces of both bulk and thin 
                         films [1]. Spin-orbit (SO) interaction is considered within the 
                         Dimmock kp model for the lead-salts, analogous to the Kane model 
                         for the III-V compounds. With standard envelope-function 
                         procedure, employing spin-dependent boundary conditions, and for 
                         the main surface directions (i.e., [111], [100] and [110]) we 
                         calculate the dispersion relation of the band of surface states 
                         laying in the PbSnTe bulk band-gap. The dependence with the 
                         thin-film thickness and with different models for the interface 
                         with the vacuum is studied. It is shown that simple expressions 
                         describing the typical TI Dirac-cone structure, with SO 
                         momentum-spin locking, are in this way easily obtained. For thin 
                         films, the opening of the Dirac-cone gap [2] and the 
                         Rashba-splitting of the surface states is clearly reproduced, and 
                         the surface-direction dependence discussed. In conclusion, the 
                         model calculation proposed is shown to be transparent and 
                         quantitatively precise enough to be useful in the investigation 
                         and in the application of the electronic properties of these TI 
                         surface states. [1] R. Buczko and L. Cywinski, Phys. Rev. B 85, 
                         205319 (2012). [2] V. Korenman and H. D. Drew, Phys. Rev. B 35, 
                         6446 (1987).",
  conference-location = "Maresias, SP",
      conference-year = "14-18 ago.",
                label = "self-archiving-INPE-MCTIC-GOV-BR",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}